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SBHSF140E Folha de dados(PDF) 4 Page - Seoul Semiconductor

Nome de Peças SBHSF140E
Descrição Electrónicos  Edge type Application
PDF  22 Pages
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Fabricante Electrônico  SEOUL [Seoul Semiconductor]
Página de início  http://www.seoulsemicon.com
Logo SEOUL - Seoul Semiconductor

SBHSF140E Folha de dados(HTML) 4 Page - Seoul Semiconductor

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Rev2.0, January 9, 2020
www.seoulsemicon.com
Product Data Sheet
SBHSF140E
– TopView LED
4
Performance Characteristics
Table 2. Electro Optical Characteristics (T
a = 25ºC)
Notes :
(1) Forward voltage measurement allowance is ±0.1V
(2) The luminous intensity IV is measured at the peak of the spatial pattern which may not be aligned
with the mechanical axis of the LED package. Luminous Intensity Measurement allowance is ±10%.
(3) 2
1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity.
Parameter
Symbol
Value
Unit
Power Dissipation
P
d
*1
850
mW
DC Forward Current
I
F
250
mA
Peak Forward Current
I
FM
*2
300
mA
Operating Temperature
T
opr
-40 ~ +85
ºC
Storage Temperature
T
stg
-40 ~ +100
ºC
Junction Temperature
Tj max
115
ºC
Notes :
(1) Care is to be taken that power dissipation does not exceed the absolute maximum rating of the
product.
(2) 1/10 Duty Cycle @ 1kHz .
Table 1. Absolute Maximum Ratings (T
a = 25ºC)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Forward Voltage*1
V
F
I
F =70mA
2.8
2.95
3.2
V
Reverse Voltage
V
R
I
R =5mA
-
0.85
1.2
V
Zener Diode Voltage
V
Z
I
Z =5mA
-
6.3
-
V
Luminous Intensity*2
I
V
I
F =70mA
7.5
8.0
-
cd
Luminous Flux*3
Flux
I
F =70mA
-
24.5
-
lm
Viewing Angle
H axis-2
½
*4
I
F =70mA
-
120
-
deg.
V axis-2
½
*4
I
F =70mA
-
120
-
deg.
CIE X
Cx
I
F =70mA
0.2763
0.290
0.3008
-
CIE Y
Cy
I
F =70mA
0.2390
0.260
0.2750
-
Peak Wavelength*5
W
P
I
F =70mA
438
444
450
nm
Thermal Resistance
(Junction/Solder)
R
th,js
I
F =70mA
-
22
-
K/W
Life Time*6
-
Tj
≤ 85℃
30,000
-
-
Hrs
ESD Sensitivity
-
-
5
-
-
kV



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