TSB571 datasheet(5/31 Pages) STMICROELECTRONICS

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Electrical characteristics

Table 5. Electrical characteristics at Vcc = 4 V, Vicm = Vcc/2, Tamb = 25 °C, and RL connected to Vcc/2 (unless otherwise

specified)

Symbol

Parameter

Conditions

Min. Typ. Max.

Unit

DC performance

Vio

Input offset voltage

-1.5

1.5

-40 °C < T < 125 °C

-2.1

2.1

ΔVio/ΔT Input offset voltage drift

-40 °C < T < 125 °C

1.5

μV/°C

Iio

Input offset current

-40 °C < T < 125 °C

Iib

Input bias current

-40 °C < T < 125 °C

CIN

Input capacitor

RIN

Input impedance

TΩ

CMR

Common mode rejection ratio 20 log

(ΔVicm/ΔVio)

Vicm = (VCC-) to (VCC+) - 1.5 V, Vout = VCC/2

114

-40 °C < T < 125 °C

Vicm = (VCC-) to (VCC+), Vout = VCC/2

-40 °C < T < 125 °C

Avd

Large signal voltage gain

RL= 10 kΩ, Vout = 0.5 to 3.5 V

100

-40 °C < T < 125 °C

VOH

High level output voltage (drop

voltage from (VCC+))

RL = 10 kΩ

-40 °C < T < 125 °C

VOL

Low level output voltage

RL = 10 kΩ

-40 °C < T < 125 °C

Iout

Isink

Vout = VCC

-40 °C < T < 125 °C

Isource

Vout = 0 V

-40 °C < T < 125 °C

ICC

Supply current (per channel)

No load, Vout = VCC/2

340

430

μA

-40 °C < T < 125 °C

500

AC performance

GBP

Gain bandwidth product

RL = 10 kΩ, CL = 100 pF

1.5

2.2

MHz

-40 °C < T < 125 °C

1.2

ϕm

Phase margin

RL = 10 kΩ, CL = 100 pF

degrees

Gain margin

RL = 10 kΩ, CL = 100 pF

Negative slew rate

Vin = 3.5 to 0.5 V, Av = 1, 10 % to 90 %, RL = 10 kΩ,

CL = 100 pF

0.50 0.78

V/μs

-40 °C < T < 125 °C

0.37

TSB571, TSB572

Electrical characteristics

DS11248 - Rev 7

page 5/31

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