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STM32WLE4JC Folha de dados(PDF) 90 Page - STMicroelectronics |
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STM32WLE4JC Folha de dados(HTML) 90 Page - STMicroelectronics |
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90 / 145 page ![]() Table 51. Current consumption in VBAT mode Symbol Parameter Conditions Typ Max Unit - VBAT (V) 0 °C 25 °C 55 °C 85 °C 105 °C 105 °C IDD(VBAT) Backup domain supply current RTC disabled 1.8 1.00 3.00 19.0 95.0 180 1.00 nA 2.4 1.00 3.00 22.0 110 200 1.00 3.0 1.00 5.00 31.0 150 270 1.00 3.6 3.00 11.0 50.0 220 380 3.00 RTC enabled and clocked by LSE quartz(1) 1.8 140 150 180 275 390 140 2.4 155 170 200 310 435 155 3.0 185 200 235 375 545 185 3.6 230 245 295 485 710 230 1. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors. Table 52. Current under Reset condition Symbol Conditions Typ Unit VDD (V) 25 °C IDD(RST) 1.8 V 600 µA 2.4 V 650 3.0 V 700 3.6 V 780 |
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