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AM4492N Folha de dados(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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AM4492N Folha de dados(HTML) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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3 / 4 page ![]() www.doingter.cn — 3 — Symbol Parameter Conditions Min Typ Max Units VSD Source-Drain Diode Forward Voltage 3 VGS=0V,IS=8A --- --- 1.3 V LS Continuous Source Current --- --- 32 A LSp Pulsed Source Current --- --- 1.3 Trr Reverse Recovery Time --- 50.2 --- NS Qrr Reverse Recovery Charge --- 95.1 --- BC Notes: Typical Characteristics: (T C=25℃ unless otherwise noted) IS=8 A, di/dt=100 A/μs VGS<Vth 1) Calculated continuous current based on maximum allowable junction temperature. 2) Repetitive rating; pulse width limited by max. junction temperature. 3) Pd is based on max. junction temperature, using junction-case thermal resistance. 4) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 ℃. 5) VDD=50 V, RG=25 Ω, L=0.3 mH, starting Tj=25 ℃. AM4492N |
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