CS213

Neotec Semiconductor Ltd.

11/13

CS213DS V1.5 2014/07/18

www.neotec.com.tw

The above information is the exclusive intellectual property of Neotec Semiconductor Ltd. and shall not be disclosed, distributed without permission from Neotec.

Recommended Application Circuit

Table1 Constant for external components

Symbol

Parts

Purpose

Recommended

Min

.

Max

.

Remarks

FET1

N channel

MOSFET

Discharge control

-

-

-

*1) 0.4 V < Threshold voltage <

Over-discharge detection voltage.

Gate to source withstand voltage >

Charger voltage.

FET2

N channel

MOSFET

Charge control

-

-

-

*1) 0.4 V < Threshold voltage <

Over-discharge detection voltage.

Gate to source withstand voltage >

Charger voltage.

R1

Resistor

ESD protection,

for power fluctuation

470Ω

100Ω

1KΩ

*2) Set Resistance to the value 2R1<

R2.

C1

Capacitor

For power fluctuation

0.1uF

0.022uF

1.0uF

*3) Install a 0.022uF capacitor or higher.

R2

Resistor

Protection for reverse

connection of a charger

1KΩ

300Ω

2KΩ

*4) The resistor is preventing big

current when a charger is connected in

reverse.