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PWCT2035AFVLLPR Folha de dados(PDF) 19 Page - NXP Semiconductors

Nome de Peças PWCT2035AFVLLPR
Descrição Electrónicos  Memory and memory interfaces
PDF  65 Pages
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Fabricante Electrônico  NXP [NXP Semiconductors]
Página de início  http://www.nxp.com
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Table 9. DC electrical specifications at 3.3 V Range (continued)
Symbol
Parameter
Value
Unit
Notes
Min.
Typ.
Max.
IohGPIO-HD_DSE_0
IolGPIO
IolGPIO-HD_DSE_0
I/O current sink capability measured when
pad Vol = 0.8 V
3
—
—
mA
IohGPIO-HD_DSE_1
I/O current source capability measured when
pad Voh = (VDD − 0.8 V)
14
—
—
mA
4
IolGPIO-HD_DSE_1
I/O current sink capability measured when
pad Vol = 0.8 V
12
—
—
mA
4
IohGPIO-FAST_DSE_0 I/O current sink capability measured when
pad Voh=VDD-0.8 V
9.5
—
—
mA
5
IolGPIO-FAST_DSE_0 I/O current sink capability measured when
pad Vol = 0.8 V
10
—
—
mA
5
IohGPIO-FAST_DSE_1 I/O current sink capability measured when
pad Voh=VDD-0.8 V
16
—
—
mA
5
IolGPIO-FAST_DSE_1 I/O current sink capability measured when
pad Vol = 0.8 V
15.5
—
—
mA
5
IOHT
Output high current total for all ports
—
—
100
mA
IIN
Input leakage current (per pin) for full temperature range at VDD = 3.3 V
6
All pins other than high drive port pins
0.005
0.5
μA
High drive port pins
0.010
0.5
μA
RPU
Internal pullup resistors
20
60
kΩ
7
RPD
Internal pulldown resistors
20
60
kΩ
8
1. MWCT1016S will operate from 2.7 V when executing from internal FIRC. When the PLL is engaged MWCT1016S is
guaranteed to operate from 2.97 V. All other MWCT101xS family devices operate from 2.7 V in all modes.
2. For reset pads, same Vih levels are applicable
3. For reset pads, same Vil levels are applicable
4. The value given is measured at high drive strength mode. For value at low drive strength mode see the Ioh_Standard
value given above.
5. For refernce only. Run simulations with the IBIS model and custom board for accurate results.
6. Several I/O have both high drive and normal drive capability selected by the associated Portx_PCRn[DSE] control bit. All
other GPIOs are normal drive only. For details refer to MWCT101xS_IO_Signal_Description_Input_Multiplexing.xlsx
attached with the Reference Manual.
7. Measured at input V = VSS
8. Measured at input V = VDD
5.4 DC electrical specifications at 5.0 V Range
Table 10. DC electrical specifications at 5.0 V Range
Symbol
Parameter
Value
Unit
Notes
Min.
Typ.
Max.
VDD
I/O Supply Voltage
4
—
5.5
V
Vih
Input Buffer High Voltage
0.65 x VDD
—
VDD + 0.3
V
1
Table continues on the next page...
I/O parameters
MWCT101XS Data Sheet, Rev. 3, 12/2019
NXP Semiconductors
19



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