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MWCT2016AFVLLPR Folha de dados(PDF) 20 Page - NXP Semiconductors

Nome de Peças MWCT2016AFVLLPR
Descrição Electrónicos  Memory and memory interfaces
PDF  65 Pages
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Fabricante Electrônico  NXP [NXP Semiconductors]
Página de início  http://www.nxp.com
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MWCT2016AFVLLPR Folha de dados(HTML) 20 Page - NXP Semiconductors

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Table 10. DC electrical specifications at 5.0 V Range (continued)
Symbol
Parameter
Value
Unit
Notes
Min.
Typ.
Max.
Vil
Input Buffer Low Voltage
VSS − 0.3
—
0.35 x VDD
V
2
Vhys
Input Buffer Hysteresis
0.06 x VDD
—
—
V
Ioh_Standard I/O current source capability
measured when pad Voh= (VDD - 0.8
V)
5
—
—
mA
Iol_Standard I/O current sink capability measured
when pad Vol= 0.8 V
5
—
—
mA
Ioh_Strong
I/O current source capability
measured when pad Voh = VDD - 0.8
V
20
—
—
mA
3, 4
Iol_Strong
I/O current sink capability measured
when pad Vol = 0.8 V
20
—
—
mA
4, 5
IOHT
Output high current total for all ports
—
—
100
mA
IIN
Input leakage current (per pin) for full temperature range at VDD = 5.5 V
6
All pins other than high drive port
pins
0.005
0.5
μA
High drive port pins
0.010
0.5
μA
RPU
Internal pullup resistors
20
50
kΩ
7
RPD
Internal pulldown resistors
20
50
kΩ
8
1. For reset pads, same Vih levels are applicable
2. For reset pads, same Vil levels are applicable
3. The value given is measured at high drive strength mode. For value at low drive strength mode see the Ioh_Standard
value given above.
4. The strong pad I/O pin is capable of switching a 50 pF load at up to 40 MHz.
5. The value given is measured at high drive strength mode. For value at low drive strength mode see the Iol_Standard value
given above.
6. Several I/O have both high drive and normal drive capability selected by the associated Portx_PCRn[DSE] control bit. All
other GPIOs are normal drive only. For details refer to MWCT101xS_IO_Signal_Description_Input_Multiplexing.xlsx
attached with the Reference Manual.
7. Measured at input V = VSS
8. Measured at input V = VDD
5.5 AC electrical specifications at 3.3 V range
Table 11. AC electrical specifications at 3.3 V Range
Symbol
DSE
Rise time (nS) 1
Fall time (nS) 1
Capacitance (pF) 2
Min.
Max.
Min.
Max.
tRFGPIO
NA
3.2
14.5
3.4
15.7
25
5.7
23.7
6.0
26.2
50
20.0
80.0
20.8
88.4
200
tRFGPIO-HD
0
3.2
14.5
3.4
15.7
25
Table continues on the next page...
I/O parameters
MWCT101XS Data Sheet, Rev. 3, 12/2019
20
NXP Semiconductors



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