P6015CSG datasheet(1/5 Pages) UNIKC

Nome de Peças	P6015CSG

Descrição Electrónicos	N-Channel Enhancement Mode MOSFET

PDF	5 Pages

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Fabricante Electrônico	UNIKC [Wuxi U-NIKC Semiconductor CO.,LTD]

Página de início	http://www.unikc.com.cn/

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P6015CSG

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY

V(BR)DSS

TO-263

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

THERMAL RESISTANCE RATINGS

UNITS

1Pulse width limited by maximum junction temperature.

2Limited only by maximum temperature allowed.

3V

DD = 50V , L = 1mH ,starting TJ = 25˚C.

1.82

°C / W

RqJA

50

Junction-to-Case

RqJC

Gate-Source Voltage

ID

Avalanche Energy

3

TC= 100°C

Operating Junction & Storage Temperature Range

SYMBOL

Pulsed Drain Current

1，2

Avalanche Current

3

IAS

16

EAS

THERMAL RESISTANCE

TYPICAL

PD

ID

TC= 25 °C

150V

Continuous Drain Current

2

TC= 100 °C

PARAMETERS/TEST CONDITIONS

RDS(ON)

60mΩ @V

GS = 10V

21A

Drain-Source Voltage

TC= 25 °C

Power Dissipation

Tj, Tstg

W

UNITS

60

13

128

mJ

27

150

±12

68

IDM

SYMBOL

21

LIMITS

A

V

VGS

VDS

V

MAXIMUM

Junction-to-Ambient

°C

-55 to 150

REV 1.0

1

2014-11-10

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