12P10-TN3-R datasheet(1/9 Pages) VBSEMI

Nome de Peças	12P10-TN3-R

Descrição Electrónicos	P-Channel 100 V (D-S) MOSFET

PDF	9 Pages

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Fabricante Electrônico	VBSEMI [VBsemi Electronics Co.,Ltd]

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P-Channel 100 V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•

100 % Rg and UIS Tested

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Power Switch

•

DC/DC Converters

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

Qg (Typ.)

- 100

0.250 at VGS = - 10 V

- 8.8

11.7

0.280 at VGS = - 4.5 V

- 8.0

TO-252

S

GD

Top View

Drain Connected to Tab

S

G

D

P-Channel MOSFET

Notes:

a. Duty cycle

≤ 1 %.

b. See SOA curve for voltage derating.

c. When Mounted on 1" square PCB (FR-4 material).

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 100

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

- 8.8

A

TC = 70 °C

- 7.1

Pulsed Drain Current

IDM

- 25

Avalanche Current

IAS

- 18

Single Avalanche Energya

L = 0.1 mH

EAS

16.2

mJ

Maximum Power Dissipationa

TC = 25 °C

PD

32.1b

W

TA = 25 °C

c

2.5

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

Junction-to-Ambient (PCB Mount)c

RthJA

50

°C/W

Junction-to-Case (Drain)

RthJC

3.9

TO-251

S

D

G

Top View

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12P10-TN3-R

1

Nº de peça semelhante - 12P10-TN3-R

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Unisonic Technologies	12P10-TN3-R	256Kb / 7P	100V P-CHANNEL MOSFET

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