12P10L-TM3-T datasheet(4/7 Pages) VBSEMI

Nome de Peças	12P10L-TM3-T

Descrição Electrónicos	P-Channel 100 V (D-S) MOSFET

PDF	7 Pages

Scroll/Zoom	100%

Fabricante Electrônico	VBSEMI [VBsemi Electronics Co.,Ltd]

Página de início	www.VBsemi.com

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TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Capacitance

On-Resistance vs. Junction Temperature

0.1

100

0.0

0.3

0.6

0.9

1.2

TJ = 25 °C

TJ = 150 °C

VSD - Source-to-Drain Voltage (V)

Crss

400

800

1200

1600

20406080

100

Ciss

Coss

VDS - Drain-to-Source Voltage (V)

0.5

0.9

1.3

1.7

2.1

- 50

- 25

100

125

150

ID =3.6 A

VGS =4.5 V

VGS =10V

TJ - Junction Temperature (°C)

Threshold Voltage

Drain Source Breakdown vs. Junction Temperature

Current Derating

- 2.3

- 2.0

- 1.7

- 1.4

- 1.1

- 50

- 25

100

125

150

ID = 250 μA

TJ - Temperature (°C)

- 130

- 124

- 118

- 112

- 106

- 100

- 50

- 25

100

125

150

ID = 250 μA

J - Junction Temperature (°C)

100

125

150

TC - Case Temperature (°C)

12P10L-TM3-T

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