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ISCN227E Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

Nome de Peças ISCN227E
Descrição Electrónicos  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCN227E Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc Website：www.iscsemi.com
isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
ISCN227E
DESCRIPTION
·
Collector–Emitter Sustaining Voltage—
: VCEO(SUS) ≥ 30 V
·
DC Current Gain—
: hFE = 50(Min) @ IC= 0.5 A
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Low power audio amplifier
·
Low current high speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
2
A
ICM
Collector Current-peak
4
A
IB
Base Current
1
A
PC
Collector Power Dissipation
Ta=25℃
10
W
Ti
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
12.5
℃
/W


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