IS25LP032D-RKLE datasheet(48/118 Pages) ISSI

48 / 118 page

IS25LP032D

IS25WP032D

Integrated Silicon Solution, Inc.- www.issi.com

Rev. A12

08/04/2020

8.8 PAGE PROGRAM OPERATION (PP, 02h)

The Page Program (PP) instruction allows up to 256 bytes data to be programmed into memory in a single

operation. The destination of the memory to be programmed must be outside the protected memory area set by

the Block Protection (BP3, BP2, BP1, BP0) bits. A PP instruction which attempts to program into a page that is

write-protected will be ignored. Before the execution of PP instruction, the Write Enable Latch (WEL) must be

enabled through a Write Enable (WREN) instruction.

The PP instruction code, three address bytes and program data (1 to 256 bytes) are input via the Sl line. Program

operation will start immediately after the CE# is brought high, otherwise the PP instruction will not be executed.

The internal control logic automatically handles the programming voltages and timing. The progress or completion

of the program operation can be determined by reading the WIP bit in Status Register via a RDSR instruction. If

the WIP bit is “1”, the program operation is still in progress. If WIP bit is “0”, the program operation has completed.

If more than 256 bytes data are sent to a device, the address counter rolls over within the same page, the previously

latched data are discarded, and the last 256 bytes are kept to be programmed into the page. The starting byte can

be anywhere within the page. When the end of the page is reached, the address will wrap around to the beginning

of the same page. If the data to be programmed are less than a full page, the data of all other bytes on the same

page will remain unchanged.

Note: A prog

ram operation can alter “1”s into “0”s. The same byte location or page may be programmed more than

once, to incrementally change

“1”s to “0”s. An erase operation is required to change “0”s to “1”s.

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