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HM9923PR Folha de dados(PDF) 3 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

Nome de Peças HM9923PR
Descrição Electrónicos  High-Voltage LED DRriver with Build-In MOSFET Switch
PDF  6 Pages
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Fabricante Electrônico  HMSEMI [Shenzhen Huazhimei Semiconductor Co., Ltd]
Página de início  http://www.hmsemi.com/
Logo HMSEMI - Shenzhen Huazhimei Semiconductor Co., Ltd

HM9923PR Folha de dados(HTML) 3 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

  HM9923PR Datasheet HTML 1Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM9923PR Datasheet HTML 2Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM9923PR Datasheet HTML 3Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM9923PR Datasheet HTML 4Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM9923PR Datasheet HTML 5Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM9923PR Datasheet HTML 6Page - Shenzhen Huazhimei Semiconductor Co., Ltd  
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3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Limit
Unit
Min
Max
VIN
Input voltage
-0.3
420
V
VDD
Low-voltage (control) part of IC supply
voltage
-0.3
10
V
* Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device.
These are stress ratings only and functional operation of the device at these or any other conditions beyond those
indicated under “recommended operating conditions” is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
RECOMMENDED OPERATION RANGE
Symbol
Parameter
Limit
Unit
Min
Max
VIN
Input voltage
20
400
V
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Condition
Limit
Ambient
temperature,
oC
Unit
Min
Max
VDDR
Regulator output voltage
VIN = (20- 400)V
5.5
9.0
25  10
V
IDD
Low-voltage (control) part
of IC consumption
current
VDD = 9,5 V
VIN = 40 V
-
350
uA
RON
ON-resistance of the
switch (DRAIN pin)
VDD = VDDR
IDRAIN = 20 mA
-
210
Ohm
VUVLO
Undervoltage threshold
(Low-voltage part of IC)
VDD = VUVLO
IDRAIN = 20 mA
4.0
VDDR
0.3
V
ISAT
MOSFET saturation
current (DRAIN pin)
VDD= VDDR
VSAT = 50 V
100
-
mA
VBR
OFF-state breakdown
voltage of the MOSFET
switch (DRAIN pin)
VDD = VDDR
IDRAIN = 1 mA
500
-
V
ITH
Threshold current
HM9921
HM9922
HM9923
VDD = VDDR
VIN = 50 V
20.5
52.0
30.8
25.5
63.0
38.2
25  10
-40
85
mA
TOFF
OFF time
(DRAIN pin)
VDD = VDDR
VIN = 50 V
8.0
13.0
25  10
us
TON
Minimum ON-time of the
switch (DRAIN pin)
-
650
ns
TBLANK
Leading Edge Blanking
Delay
200
400
ns
/
/
Shenzhen H&M Semiconductor Co.Ltd
http://www.hmsemi.com



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