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AS7C331MPFD18A Folha de dados(PDF) 6 Page - Alliance Semiconductor Corporation

Nome de Peças AS7C331MPFD18A
Descrição Electrónicos  3.3V 1M x 18 pipelined burst synchronous SRAM
PDF  19 Pages
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Fabricante Electrônico  ALSC [Alliance Semiconductor Corporation]
Página de início  https://www.alliancememory.com
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AS7C331MPFD18A Folha de dados(HTML) 6 Page - Alliance Semiconductor Corporation

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AS7C331MPFD18A
2/10/05, v. 1.3
Alliance Semiconductor
6 of 19
Write enable truth table (per byte)
Key: X = don’t care; L = low; H = high; BWE, BWn = internal write signal
Asynchronous Truth Table
Notes:
1. X means “Don’t Care”
2. ZZ pin is pulled down internally
3. For write cycles that follows read cycles, the output buffers must be disabled with OE, otherwise data bus contention will occur.
4. Snooze mode means power down state of which stand-by current does not depend on cycle times
5. Deselected means power down state of which stand-by current depends on cycle times
Burst sequence table
Function
GWE
BWE
BWa
BWb
Write all bytes (a, b)
L
XXX
H
LLL
Write byte a
H
L
L
H
Write byte b
H
L
H
L
Read
H
HXX
HLH
H
Operation
ZZ
OE
I/O Status
Snooze mode
H
X
High-Z
Read
L
L
Dout
LH
High-Z
Write
L
X
Din, High-Z
Deselected
L
X
High-Z
Interleaved burst address (LBO = 1)
Linear burst address (LBO = 0)
A1 A0
A1 A0
A1 A0
A1 A0
A1 A0
A1 A0
A1 A0
A1 A0
Starting Address
0 0
0 1
1 0
1 1
Starting Address
0 0
0 1
1 0
1 1
First Increment
0 1
0 0
1 1
1 0
First Increment
0 1
1 0
1 1
0 0
Second Increment
1 0
1 1
0 0
0 1
Second Increment
1 0
1 1
0 0
0 1
Third Increment
1 1
1 0
0 1
0 0
Third Increment
1 1
1 0
0 1
1 0



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