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H5GQ2H24AFR-R0C Folha de dados(PDF) 128 Page - Hynix Semiconductor

Nome de Peças H5GQ2H24AFR-R0C
Descrição Electrónicos  2Gb (64Mx32) GDDR5 SGRAM
PDF  172 Pages
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Fabricante Electrônico  HYNIX [Hynix Semiconductor]
Página de início  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor

H5GQ2H24AFR-R0C Folha de dados(HTML) 128 Page - Hynix Semiconductor

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This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
128
H5GQ2H24AFR
2.  AC noise in the system is estimated at 50mV pk‐pk for the purpose of DRAM design.
3.  Source of Reference Voltage and control of Reference Voltage for DQ and DBI# pins is determined by VREFD, Half VREFD, Auto 
VREFD, VREFD MERGE and VREFD Offsets mode registers.
4.  VREFD Offsets are not supported with VREFD2.
5.  External VREFC is to be provided by the controller as there is no other alternative supply.
6.  DQ/DBI# input slew rate must be greater than or equal to 3V/ns for POD15 and 2.7V/ns for POD135 . The slew rate is measured 
between VREFD crossing and VIHD(AC) or VILD(AC) or VREFD2 crossing and VIHD2(AC) or VILD2(AC).
7.  ADR/CMD input slew rate must be greater than or equal to 3V/ns.  The slew rate is measured between VREFC crossing and 
VIHA(AC) or VILA(AC).
8.  VIHX and VILX define the voltage levels for the receiver that detects x32 or x16 mode with RESET# going High.



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