| Os motores de busca de Datasheet de Componentes eletrônicos |
|
PJM3407BPSA Folha de dados(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
|
|
|||||||||||||||||||||||||||||
PJM3407BPSA Folha de dados(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
|
1 / 6 page ![]() PJM3407BPSA P Enhancement Field Effect Transistor 1 / 6 Features VDS=-30V, ID=-4.1A RDS(on)=38mΩ (Typ.)@VGS=-10V High density cell design for ultra low RDS(ON) Low gate charge Applications Load Switch SOT-23 1 2 Gate Source 1. Gate 2.Source 3.Drain Marking: R7B Schematic Diagram Drain 3 Absolute Maximum Ratings Ratings at TA =25℃ unless otherwise specified. Parameter Symbol Value Units Drain-Source Voltage -VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current -ID 4.1 A Power Dissipation PD 0.9 W Junction and Storage Temperature Range TJ, TSTG 150, -55 to 150 °C Thermal Characteristics Parameter Symbol Typ. Units Maximum Junction-to-Ambient Note1 RθJA 139 °C/W www.pingjingsemi.com Revision:1.0 Jun-2019 Battery protection |
Nº de peça semelhante - PJM3407BPSA |
|
Descrição semelhante - PJM3407BPSA |
|
|
|
Ligação URL |
| ALLDATASHEET é útil para você? [ DONATE ] |
Sobre Alldatasheet | Publicidade | Contato conosco | Privacy Policy | Link para a ficha técnica | roca de Link | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |