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IXTY8N65X2 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

Nome de Peças IXTY8N65X2
Descrição Electrónicos  isc N-Channel MOSFET Transistor
PDF  2 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IXTY8N65X2 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
IXTY8N65X2
·
FEATURES
·
Drain Source Voltage-
: VDSS= 650V(Min)
·
Static Drain-Source On-Resistance
: RDS(on) ≤500mΩ@VGS= 10V
·
Fast Switching
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·
APPLICATIONS
·
Easy to Mount
·
Space Savings
·
High Power Density
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage-Continuous
±
30
V
ID
Drain Current-Continuous
8
A
IDM
Drain Current-Single Plused
16
A
PD
Total Dissipation @TC=25℃
150
W
Tj
Max. Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature
-55~150
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.83
℃
/W


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