CLLDB3 datasheet(1/4 Pages) CDIL

Nome de Peças	CLLDB3

Descrição Electrónicos	SILICON DIAC BIDIRECTIONAL TRIGGER DIODE GLASS PASSIVATED PNPN DEVICE

PDF	4 Pages

Scroll/Zoom	100%

Fabricante Electrônico	CDIL [Continental Device India Limited]

Página de início	http://www.cdilsemi.com

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SILICON DIAC

CLLDB3

BIDIRECTIONAL TRIGGER DIODE

GLASS PASSIVATED PNPN DEVICE

SOD - 80C

Mini MELF (LL-34)

Functioning as a Trigger Diode with a Fixed Voltage Reference, CLLDB3 can be

used in Conjunction with Triacs for Simplified Gate Control Circuits or as a Starting

Element in Fluorescent Lamp Ballasts

ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise))

SYMBOL

VALUE

UNIT

Power Dissipation on Printed Circuit (L=10mm) (Ta=50

oC)

Ptot

150

mW

Up to Ta = 50

oC and Mounted on a Ceramic Substrate of 10mm x

Ptot

120

mW

10mm x 0.6mm

Repetitive Peak on-State Current (tp=20µ

µs, f=100Hz)

ITRM

2

A

Storage Temperature Range

Tstg

- 40 to +125

ºC

Junction Temperature Range

Tj

- 40 to +110

ºC

THERMAL RESISTANCE

Junction to Ambient in free air

400

ºC/W

Junction-Leads

150

ºC/W

ELECTRICAL CHARACTERISTICS (Tj=25ºC unless specified otherwise)

SYMBOL

MIN

MAX

UNIT

* Breakover Voltage

VBO

28

36

V

Breakover Voltage Symmetry

[I+VBOI-I-VBOI]

+ 3

V

* Dynamic Breakover Voltage

I

∆V+ I

5

V

* Output Voltage

VO

5

V

* Breakover Current

IBO

50

µA

* Rise Time

tr

TYP 1.5

µs

* Leakage Current

IB

10

µA

* Electrical characteristic applicable in both forward and reverse directions

** Connected in parallel with the devices.

DESCRIPTION

TEST CONDITIONS

** C = 22nF

see diagram 1

Rth(j-a)

Rth(j-l)

∆1=[I

BO to IF=10mA]

see diagram 2

** C = 22nF

DESCRIPTION

see diagram 1

see diagram 3

VB = 0.5 VBO max

see diagram 1

Continental Device India Limited

Data Sheet

Page 1 of 4

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

An ISO/TS16949 and ISO 9001 Certified Company

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