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ISCN200F Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited

Nome de Peças ISCN200F
Descrição Electrónicos  isc Silicon NPN Power Transistors
PDF  2 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCN200F Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited

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isc website:www.iscsemi.com
isc & iscsemi is registered trademark
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isc Silicon NPN Power Transistors
ISCN200F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 10mA ; RBE= ∞
80
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 10μA; IE= 0
80
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 10μA; IC= 0
5
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 2A; IB= 0.2A
1.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 2A; IB= 0.2A
1.2
V
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
10
μ
A
hFE -1
DC current gain
IC= 1A ; VCE= 4V
100
300
hFE -2
DC current gain
IC=0.1A ; VCE= 4V
35
NOTICE:
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.



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