TIP32 datasheet(1/2 Pages) FS

Nome de Peças	TIP32

Descrição Electrónicos	TRANSISTOR (PNP)

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Fabricante Electrônico	FS [First Silicon Co., Ltd]

Página de início	http://www.firstsilicon.co.kr/

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SEMICONDUCTOR

TECHNICAL DATA

TIP32

2011. 11. 16

1/2

Revision No : 0

DIM

MILLIMETERS

TO-220AB

A

B

C

D

E

F

H

J

N

O

0.8 ± 0.1

2.7 ± 0.2

2.54 ± 0.2

13.6 ± 0.2

3.8 ± 0.2

10.15 ± 0.15

4.5 ± 0.2

2.7 ± 0.2

15.30 MAX

1.3+0.1/-0.15

0.4 ± 0.15

A

F

B

J

E

O

C

H

N

D

P

1 BASE

2 COLLECTOR

3 EMITTER

1

2

3

ELECTRICAL

CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

TIP32/32A/32B/32C

TRANSISTOR (PNP)

FEATURES

Medium Power Linear Switching Applications

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

TIP32

TIP32A TIP32B TIP32C

Unit

VCBO

Collector-Base Voltage

-40

-60

-80

-100

V

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current

-3

A

PC

Collector Power Dissipation

2

W

RθJA

Thermal Resistance from Junction to Ambient

62.5

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~+150

℃

-40

-60

-80

-100

V

Parameter

Symbol

Test

conditions

M in

M ax

Unit

Collector-base breakdown voltage

TIP32

TIP32A

TIP32B

TIP32C

V(BR)CBO

IC= -1mA, IE=0

-40

-60

-80

-100

V

Collector-emitter breakdown voltage *

TIP32

TIP32A

TIP32B

TIP32C

VCEO(sus)

IC= -30mA, IB=0

-40

-60

-80

-100

V

Emitter-base breakdown voltage

V(BR)EBO

IE= -1mA, IC=0

-5

V

Collector cut-off current

TIP32

TIP32A

TIP32B

TIP32C

ICBO

VCB=-40V,IE=0

VCB=-60V, IE=0

VCB=-80V, IE=0

VCB=-100V, IE=0

-200

μA

Collector cut-off current

TIP32/32A

TIP32B/32C

ICEO

VCE= -30V, IB= 0

VCE= -60V, IB= 0

-0.3

mA

Emitter cut-off current

IEBO

VEB=-5V, IC=0

-1

mA

hFE(1)

VCE= -4V, IC=-1A

25

DC current gain

hFE(2)

VCE=-4 V, IC=-3A

15

75

Collector-emitter saturation voltage

VCE(sat)

IC=-3A, IB=-0.375A

-1.2

V

Base-emitter voltage

VBE(on)

VCE=-4V, IC=-3A

-1.8

V

Transition frequency

fT

VCE=-10V , IC=-0.5A

3

MHz

* Pulse Test: PW

≤300µs, Duty Cycle≤2%.

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