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SS8050 Folha de dados(PDF) 2 Page - First Silicon Co., Ltd |
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SS8050 Folha de dados(HTML) 2 Page - First Silicon Co., Ltd |
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2 / 6 page ![]() Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 μA Emitter cut-off current ICEO VCE=20V, IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 μA hFE(1) VCE=1V, IC=100mA 85 400 DC current gain hFE(2) VCE=1V, IC=800mA 40 Collector-emitter saturation voltage VCE(sat) IC=800mA, IB=80mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=800mA, IB=80mA 1.2 V Base-emitter voltage VBE VCE=1V, IC=10mA 1 V Transition frequency fT VCE=10V, IC=50mA,f=30MHZ 100 MHz CLASSIFICATION OF hFE(1) Rank B C D D3 Range 85-160 120-200 160-300 300-400 ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) 2020. 05. 15 2/6 Revision No : 0 SS8050 |
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