COLLECTOR

3

1

BASE

2

EMITTER

SEMICONDUCTOR

TECHNICAL DATA

FTC3880

2013. 06. 25

1/3

Revision No : 1

SOT–23

1

3

2

Purpose: High frequency low noise amplifier.

Features: Small reverse transfer capacitance, low noise figure.

Absolute maximum ratings(Ta=25℃)

Symbol

Rating

Unit

V

CBO

40

V

V

CEO

30

V

V

EBO

4.0

V

I

C

20

mA

I

E

-20

mA

P

C

150

mW

T

j

150

℃

T

stg

-55～150

℃

Electrical characteristics(Ta=25℃)

Rating

Symbol

Test condition

Min

Typ

Max

Unit

I

CBO

V

I

0.5

μA

I

EBO

V

I

0.5

μA

h

FE

V

I

40

200

C

re

V

f=1.0MHz

0.7

pF

f

T

V

I

550

MHz

C

V

I

f=30MHz

30

pS

NF

V

I

f=100MHz

2.5

5.0

dB

G

pe

V

I

f=100MHz

15

18

dB

R

O

Y

40～80

70～140

100～200

Marking

HAQR

HAQO

HAQY