10N65G-TA3-T datasheet(1/10 Pages) VBSEMI

Nome de Peças	10N65G-TA3-T

Descrição Electrónicos	N-Channel 6 50V (D-S) Power MOSFET

PDF	10 Pages

Scroll/Zoom	100%

Fabricante Electrônico	VBSEMI [VBsemi Electronics Co.,Ltd]

Página de início	www.VBsemi.com

Logo

1 / 10 page

N-Channel 650V (D-S) Power MOSFET

FEATURES

• Low figure-of-merit (FOM) Ron x Qg

• Low input capacitance (Ciss)

• Reduced switching and conduction losses

• Ultra low gate charge (Qg)

• Avalanche energy rated (UIS)

APPLICATIONS

• Server and telecom power supplies

• Switch mode power supplies (SMPS)

• Power factor correction power supplies (PFC)

• Lighting

- High-intensity discharge (HID)

- Fluorescent ballast lighting

• Industrial

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25

Ω, IAS = 4.5 A.

c. 1.6 mm from case.

d. ISD

≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C.

PRODUCT SUMMARY

VDS (V) at TJ max.

650

RDS(on) max. at 25 °C (

Ω)VGS = 10 V

0.

Qg max. (nC)

43

Qgs (nC)

5

Qgd (nC)

22

Configuration

Single

N-Channel MOSFET

G

D

S

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

650

V

Gate-Source Voltage

VGS

± 30

Continuous Drain Current (TJ = 150 °C)

VGS at 10 V

TC = 25 °C

ID

A

TC = 100 °C

Pulsed Drain Current a

IDM

Linear Derating Factor

3.2

W/°C

Single Pulse Avalanche Energy b

EAS

mJ

Maximum Power Dissipation

PD

/34

W

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to +150

°C

Drain-Source Voltage Slope

TJ = 125 °C

dV/dt

15

V/ns

Reverse Diode dV/dt d

4.1

Soldering Recommendations (Peak Temperature) c

for 10 s

300

°C

TO-220AB

Top View

GD S

G D S

TO-220 FULLPAK

Top View

86

D2PAK

(TO-263)

G

D

S

106

0

10

8

.0

40

28

10N65G-TA3-T

1

www.VBsemi.tw

E-mail：China@VBsemi TEL:86-755-83251052

Nº de peça semelhante - 10N65G-TA3-T

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Unisonic Technologies	10N65G-TA3-T	341Kb / 8P	10A, 650V N-CHANNEL POWER MOSFET
Unisonic Technologies	10N65G-TA3-T	396Kb / 9P	N-CHANNEL MOSFET ARRAY FOR SWITCHING

More results

Descrição semelhante - 10N65G-TA3-T

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
VBsemi Electronics Co.,...	VBL165R10	854Kb / 10P	N-Channel 6 50V (D-S) Power MOSFET
	VBM165R10	851Kb / 10P	N-Channel 6 50V (D-S) Power MOSFET
	VBMB165R12	858Kb / 10P	N-Channel 6 50V (D-S) Power MOSFET
	IRF830ASTRLPBF	2Mb / 10P	N-Channel 6 50V (D-S) Power MOSFET
	K3569	2Mb / 10P	N-Channel 6 50V (D-S) Power MOSFET
	03N8063	3Mb / 10P	N-Channel 6 50V (D-S) Power MOSFET
	10N60	2Mb / 10P	N-Channel 6 50V (D-S) Power MOSFET
	07N65	2Mb / 10P	N-Channel 6 50V (D-S) Power MOSFET
	10N62K3	2Mb / 10P	N-Channel 6 50V (D-S) Power MOSFET
	10NM60ND	2Mb / 10P	N-Channel 6 50V (D-S) Power MOSFET

More results

10N65G-TA3-T Folha de dados(PDF) 1 Page - VBsemi Electronics Co.,Ltd

10N65G-TA3-T Folha de dados(HTML) 1 Page - VBsemi Electronics Co.,Ltd

Nº de peça semelhante - 10N65G-TA3-T

Descrição semelhante - 10N65G-TA3-T

Html Pages

1 2 3 4 5 6 7 8 9 10

Folha de dados Download

Ligação URL