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2SD2162 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

Nome de Peças 2SD2162
Descrição Electrónicos  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD2162 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc Silicon NPN Darlington Power Transistor
2SD2162
DESCRIPTION
·
High hFE due to Darlington connection
: HFE ≥ 2,000 @(VCE = 2.0 V, IC = 3.0 A)
·
Low Collector Saturation Voltage-
: VCE(sat) ≤1.5V @ (IC=3A, IB= 3mA)
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for low-frequency power amplifiers and low-
speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
8
A
IB
Base Current-Continuous
0.8
A
PC
Collector Power Dissipation
@Ta=25℃
2
W
Collector Power Dissipation
@TC=25℃
25
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃


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