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M58LT128GST Folha de dados(PDF) 48 Page - STMicroelectronics

Nome de Peças M58LT128GST
Descrição Electrónicos  128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
PDF  98 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M58LT128GST Folha de dados(HTML) 48 Page - STMicroelectronics

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9 Program and Erase times and Endurance cycles
M58LT128GST, M58LT128GSB
48/98
Erase
Parameter Block (16 KWord)
0.4
2.5
s
Main Block (64 KWord)
1
4
s
Program(3)
Single Cell
Word Program
30
60
µs
Single Word
Word Program
85
170
µs
Buffer Enhanced
Factory Program(4)
10
µs
Buffer (32 Words)
Buffer Program
340
680
µs
Buffer Enhanced
Factory Program
320
µs
Main Block (64
KWords)
Buffer Program
640
ms
Buffer Enhanced
Factory Program
640
ms
Bank (16 Mbits)
Buffer Program
10
s
Buffer Enhanced
Factory Program
10
s
Program/Erase
Cycles (per Block)
Main Blocks
1000 cycles
Parameter Blocks
2500 cycles
1.
TA = –25 to 85°C; VDD = 1.7V to 2V; VDDQ = 2.7 to 3.6V.
2.
Values are liable to change with the external system-level overhead (command sequence and Status Register polling
execution).
3.
Excludes the time needed to execute the command sequence.
4.
This is an average value on the entire device.
Parameter
Condition(1)(2)
Min
Typ
Typical
after
100kW/E
Cycles
Max
Unit



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