AM652X datasheet(247/277 Pages) TI1

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247

AM6548, AM6528, AM6546

AM6526, AM6527

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SPRSP08I – NOVEMBER 2017 – REVISED DECEMBER 2019

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Detailed Description

6.4.5.7

ЕCAP

Integrated in the MAIN domain one Enhanced Capture (ECAP) module provides accurate timing of events.

When not being used for event capture, its resources can be used to generate a single channel of

asymmetrical PWM waveforms (configurable as either one capture input, or as one auxiliary PWM output).

ECAP module can be used for:

•

Sample rate measurements of audio inputs

•

Speed measurements of rotating machinery (for example, toothed sprockets sensed via Hall

sensors)

•

Elapsed time measurements between position sensor pulses

•

Period and duty cycle measurements of pulse train signals

•

Decoding current or voltage amplitude derived from duty cycle encoded current/voltage sensors.

For more information, see Enhanced Capture (ECAP) Module section in the device TRM.

6.4.5.8

EPWM

An effective PWM peripheral must be able to generate complex pulse width waveforms with minimal CPU

overhead or intervention. It needs to be highly programmable and very flexible while being easy to

understand and use. The EPWM unit described here addresses these requirements by allocating all

needed timing and control resources on a per PWM channel basis. Cross coupling or sharing of resources

has been avoided; instead, the EPWM is built up from smaller single channel modules with separate

resources and that can operate together as required to form a system. This modular approach results in

an orthogonal architecture and provides a more transparent view of the peripheral structure, helping users

to understand its operation quickly.

For more information, see Enhanced Pulse Width Modulation (EPWM) Module section in the device TRM.

6.4.5.9

ELM

The ELM is used with the GPMC. Syndrome polynomials generated on-the-fly when reading a NAND flash

page and stored in GPMC registers are passed to the ELM. A host processor can then correct the data

block by flipping the bits to which the ELM error-location outputs point.

When reading from NAND flash memories, some level of error-correction is required. In the case of NAND

modules with no internal correction capability, sometimes referred to as bare NANDs, the correction

process is delegated to the memory controller. ELM can be also used to support parallel NOR flash or

NAND flash.

The General-Purpose Memory Controller (GPMC) probes data read from an external NAND flash and

uses this to compute checksum-like information, called syndrome polynomials, on a per-block basis. Each

syndrome polynomial gives a status of the read operations for a full block, including 512 bytes of data,

parity bits, and an optional spare-area data field, with a maximum block size of 1023 bytes. Computation

is based on a Bose-Chaudhuri-Hocquenghem (BCH) algorithm. The ELM extracts error addresses from

these syndrome polynomials.

Based on the syndrome polynomial value, the ELM can detect errors, compute the number of errors, and

give the location of each error bit. The actual data is not required to complete the error-correction

algorithm. Errors can be reported anywhere in the NAND flash block, including in the parity bits.

For more information, see Error Location Module (ELM) section in the device TRM.

6.4.5.10 ESM

The Error Signaling Module (ESM) aggregates safety-related events and/or errors from throughout the

device into one location. It can signal both low and high priority interrupts to a processor to deal with a

safety event and/or manipulate an I/O error pin to signal an external hardware that an error has occurred.

Therefore an external controller is able to reset the device or keep the system in a safe, known state.

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