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FGA40N60UFD Folha de dados(PDF) 5 Page - Fairchild Semiconductor

Nome de Peças FGA40N60UFD
Descrição Electrónicos  Ultrafast IGBT
PDF  8 Pages
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Fabricante Electrônico  FAIRCHILD [Fairchild Semiconductor]
Página de início  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FGA40N60UFD Folha de dados(HTML) 5 Page - Fairchild Semiconductor

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©2003 Fairchild Semiconductor Corporation
FGA40N60UFD Rev. A
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
1E-3
0.01
0.1
1
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
Rectangular Pulse Duration [sec]
1
10
100
1000
0.1
1
10
100
500
Safe Operating Area
V
GE=20V, TC=100
oC
Collector-Emitter Voltage, V
CE [V]
0.3
1
10
100
1000
0.1
1
10
100
500
Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
linearly with increase
in temperature
50us
100us
1㎳
DC Operation
IC MAX. (Continuous)
IC MAX. (Pulsed)
Collector-Emitter Voltage, VCE [V]
Fig 14. Gate Charge Characteristics
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
Fig 13. Switching Loss vs. Collector Current
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
× Zthjc + T
C
Fig 17. Transient Thermal Impedance of IGBT
10
15
20
25
30
35
40
10
100
1000
3000
Eoff
Eon
Eoff
Common Emitter
V
CC
= 300V, V
GE
= ± 15V
R
G
= 10
Ω
T
C =
25℃
T
C = 125
℃
Collector Current , Ic (A)
0
306090
120
0
3
6
9
12
15
200V
300V
Vcc=100V
Common Emitter
R
L=15
Ω
(Tc=25 ℃)
Gate Charge, Qg (nC)



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