LM393DGKRG4 datasheet(6/46 Pages) TI1

6 / 46 page

LM193, LM293, LM293A, LM393, LM393A, LM2903, LM2903V, LM393B, LM2903B

SLCS005AB – OCTOBER 1979 – REVISED DECEMBER 2019

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Product Folder Links: LM193 LM293 LM293A LM393 LM393A LM2903 LM2903V LM393B LM2903B

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(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information: LM193

THERMAL METRIC(1)

LM193

UNIT

(SOIC)

8 pin

RθJA

Junction-to-ambient thermal resistance

126.4

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

°C/W

RθJB

Junction-to-board thermal resistance

64.9

°C/W

ψJT

Junction-to-top characterization parameter

20.3

°C/W

ψJB

Junction-to-board characterization parameter

64.5

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

n/a

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.5 Thermal Information: LM293, LM393, LM2903 (all 'V' and 'A' suffixes)

THERMAL METRIC(1)

LM293, LM393, LM2903

UNIT

(SOIC)

DGK

(VSSOP)

(PDIP)

(SO)

(TSSOP)

8 pin

RθJA

Junction-to-ambient thermal resistance

131.8

199.4

73.7

139

194.1

°C/W

RθJC(top) Junction-to-case (top) thermal resistance

78.4

90.2

62.6

98.9

77.0

°C/W

RθJB

Junction-to-board thermal resistance

72.2

120.8

50.8

83.7

123.0

°C/W

ψJT

Junction-to-top characterization parameter

26.5

21.5

39.2

47.4

13.1

°C/W

ψJB

Junction-to-board characterization parameter

71.1

119.1

50.7

121.3

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.6 Thermal Information: LM393B and LM2903B

THERMAL METRIC(1)

LM393B, LM2903B

UNIT

(SOIC)

DGK

(VSSOP)

(TSSOP)

8 pin

RθJA

Junction-to-ambient thermal resistance

148.5

193.7

200.6

°C/W

RθJC(top) Junction-to-case (top) thermal resistance

90.2

82.9

89.6

°C/W

RθJB

Junction-to-board thermal resistance

91.8

115.5

131.3

°C/W

ψJT

Junction-to-top characterization parameter

38.5

20.8

22.1

°C/W

ψJB

Junction-to-board characterization parameter

91.1

113.9

129.6

°C/W

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