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IRLR9343 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

Nome de Peças IRLR9343
Descrição Electrónicos  isc P-Channel MOSFET Transistor
PDF  2 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRLR9343 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc P-Channel MOSFET Transistor
IRLR9343
·
FEATURES
·
Static drain-source on-resistance:
RDS(on)≤105mΩ
·
175℃ Operating Junction Temperature
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·
APPLICATIONS
·
Audio amplifier applications.
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
-55
V
VGS
Gate-Source Voltage
±
20
V
ID
Drain Current-Continuous
-20
A
IDM
Drain Current-Single Pulsed
-60
A
PD
Total Dissipation @TC=25℃
79
W
Tj
Tstg
Operating Junction And Storage Temperature
-40~175
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(j-c)
Channel-to-case thermal resistance
1.9
℃
/W
·
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
BVDSS
Drain-Source Breakdown Voltage
VGS=0V; ID= -0.25mA
-55
V
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID= -0.25mA
-1.0
V
RDS(on)
Drain-Source On-Resistance
VGS= -10V; ID=-3.4A
105
mΩ
IGSS
Gate-Source Leakage Current
VGS= ±20V
±10
μ
A
IDSS
Drain-Source Leakage Current
VDS= -55V; VGS= 0V
-2
μ
A
VSD
Diode forward voltage
Is= -14A, VGS = 0V
-1.2
V


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