PSMN035-100LS datasheet(2/15 Pages) NEXPERIA

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Product profile

1.1 General description

Standard level N-channel MOSFET in DFN3333-8 package qualified to 150 °C. This

product is designed and qualified for use in a wide range of industrial, communications

and power supply equipment.

1.2 Features and benefits

 High efficiency due to low switching

and conduction losses

 Small footprint for compact designs

 Suitable for standard level gate drive

sources

1.3 Applications

 DC-to-DC converters

 Lithium-ion battery protection

 Load switching

1.4 Quick reference data

PSMN035-100LS

N-channel DFN3333-8 100 V 32 m

Ω standard level MOSFET

Rev. 3 — 12 December 2011

Product data sheet

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source voltage

Tj ≥ 25 °C; Tj ≤ 150 °C

100

drain current

Tmb =25°C; VGS = 10 V; see Figure 1

--27

Ptot

total power dissipation

Tmb = 25 °C; see Figure 2

--65

junction temperature

-55

150

°C

Static characteristics

RDSon

drain-source on-state resistance VGS =10V; ID =10A; Tj =100 °C;

see Figure 12

--63

Ω

VGS =10V; ID =10A; Tj =25°C;

see Figure 13

2932m

Ω

Dynamic characteristics

QGD

gate-drain charge

VGS =10V; ID =15A; VDS =50V;

see Figure 14; see Figure 15

-7

-nC

QG(tot)

total gate charge

Avalanche ruggedness

EDS(AL)S

non-repetitive drain-source

avalanche energy

VGS =10V; Tj(init) =25°C; ID =27A;

Vsup ≤ 100 V; unclamped; RGS =50 Ω

--37

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