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ISCN160N Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

Nome de Peças ISCN160N
Descrição Electrónicos  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCN160N Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

  ISCN160N Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISCN160N Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
ISCN160N
DESCRIPTION
·
Collector-Emitter Breakdown Voltage-
: VCEO= 800V(Min)
·
High Voltage Capability
·
Wide Area of Safe Operation
·
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·
Designed for use in large screen color deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector- Emitter Voltage(VBE= 0)
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
15
A
IB
Base Current- Continuous
4
A
IBM
Base Current-Peak
6
A
PC
Collector Power Dissipation
@TC=25℃
125
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.0
℃
/W


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