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10N60 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited |
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10N60 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor 10N60 · FEATURES · Drain Current –ID= 9.5A@ TC=25℃ · Drain Source Voltage- : VDSS= 600V(Min) · Static Drain-Source On-Resistance : RDS(on) = 0.73Ω(Max) · Minimum Lot-to-Lot variations for robust device performance and reliable operation · DESCRITION · Designed for high efficiency switch mode power supply. · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ± 30 V ID Drain Current-Continuous 9.5 A IDM Drain Current-Single Plused 38 A PD Total Dissipation @TC=25℃ 156 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.8 ℃ /W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃ /W |
Nº de peça semelhante - 10N60 |
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Descrição semelhante - 10N60 |
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