FDS21 datasheet(1/3 Pages) FS

Nome de Peças	FDS21

Descrição Electrónicos	High Voltage Switching Diode

PDF	3 Pages

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Fabricante Electrônico	FS [First Silicon Co., Ltd]

Página de início	http://www.firstsilicon.co.kr/

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3

CATHODE

1

ANODE

SEMICONDUCTOR

TECHNICAL DATA

FDS21

2009. 5. 28

1/3

Revision No : 0

SOT –23

1

3

2

High Voltage Switching Diode

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Continuous Reverse Voltage

V R

250

Vdc

Peak Forward Current

I F

200

mAdc

Peak Forward Surge Current

I

FM(surge)

625

mAdc

FETURE

• Pb-Free Package is available.

THERMAL CHARACTERISTICS

l

o

b

m

y

S

c

i

t

s

i

r

e

t

c

a

r

a

h

C

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

P

D

225

mW

T

A = 25°C

Derate above 25°C

1.8

mW/°C

Thermal Resistance, Junction to Ambient

R

θJA

556

°C/W

Total Device Dissipation

P

D

300

mW

Alumina Substrate, (2) T

A = 25°C

Derate above 25°C

2.4

mW/°C

Thermal Resistance, Junction to Ambient

R

θJA

417

°C/W

Junction and Storage Temperature

T

J , Tstg

–55 to +150

°C

ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted)

i

M

l

o

b

m

y

S

c

i

t

s

i

r

e

t

c

a

r

a

h

C

n

Max

Unit

OFF CHARACTERISTICS

I

t

n

e

r

u

C

e

g

a

k

a

e

L

e

g

a

t

l

o

V

e

s

r

e

v

e

R

µAdc

(V R

1

.

0

—

)

c

d

V

0

2

=

(V R = 200Vdc, T J

0

1

—

)

C

°

0

5

1

=

Reverse Breakdown Voltage

V

(BR)

250

—

Vdc

(I BR = 100

µAdc)

V

e

g

a

t

l

o

V

d

r

a

w

r

o

F

mV

(I F

0

1

—

)

c

d

A

m

0

1

=

(I F

0

5

2

1

—

)

c

d

A

m

0

2

=

Diode Capacitance

C

D

—

5.0

pF

(V R = 0, f = 1.0 MHz)

Reverse Recovery Time

t

rr

—

50

ns

(I F = I R = 30mAdc, R L = 100 Ω)

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Shipping

FDS21

JS

3000/Tape&Reel

Nº de peça semelhante - FDS21

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