BYT28 datasheet(3/9 Pages) WEEN

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BYT28_SER

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Product data sheet

Rev.

6 — 29 September 2018

3 of

WeEn Semiconductors

BYT28 series

Dual rectifier diodes ultrafast

Characteristics

Fig 1.

Transient thermal impedance from junction to mounting base as a function of pulse duration

001aab919

tp (s)

10−6

110

10−1

10−2

10−5

10−3

10−4

10−1

10−2

Zth(j-mb)

(K/W)

10−3

δ =

Ptot

Table 5.

Characteristics

Tj = 25 C; unless otherwise stated.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Characteristics are per diode

forward voltage

IF = 5 A; Tj = 150 C

0.95

1.05

IF = 10 A

1.3

1.4

reverse current

VR = VRRM

-2



VR = VRRM; Tj = 100 C

200



reverse recovery charge

IF = 2 A; VR  30 V; dIF/dt = 20 A/s;

see Figure 9

5060nC

trr

reverse recovery time

IF = 1 A; VR  30 V; dIF/dt = 100 A/s;

see Figure 6

5060ns

IRRM

repetitive peak reverse current

IF = 5 A; VR  30 V; dIF/dt = 50 A/s;

Tj = 100 C; see Figure 7

23A

Vfr

forward recovery voltage

IF = 1 A; dIF/dt = 10 A/s-

2.5

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