STTH15L06FP datasheet(2/8 Pages) STMICROELECTRONICS

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STTH15L06

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Table 4: Thermal Resistance

Table 5: Static Electrical Characteristics (per diode)

Pulse test:

* tp = 5 ms,

δ < 2%

** tp = 380 µs,

δ < 2%

To evaluate the conduction losses use the following equation: P = 0.94 x IF(AV) + 0.017 IF

(RMS)

Table 6: Dynamic Characteristics

Symbol

Parameter

Value (max).

Unit

Rth(j-c)

Junction to case

TO-220AC / D2PAK

1.7

°C/W

TO-220FPAC

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

IR *

Reverse leakage current Tj = 25°C

VR = VRRM

µA

Tj = 150°C

400

VF **

Forward voltage drop

Tj = 25°C

IF = 15A

1.55

Tj = 150°C

0.95

1.2

Symbol

Parameter

Test conditions

Min.

Typ Max.

Unit

trr

Reverse recovery

time

Tj = 25°C

IF = 0.5A Irr = 0.25A IR =1A

IF = 1A dIF/dt = 50 A/µs VR =30V

IRM

Reverse recovery

current

Tj = 125°C IF = 15A

VR = 400V

dIF/dt = 100 A/µs

8.5

tfr

Forward recovery

time

Tj = 25°C IF = 15A

dIF/dt = 100 A/µs

VFR = 1.1 x VFmax

300

VFP

Forward recovery

voltage

Tj = 25°C

IF = 15A

dIF/dt = 100 A/µs

VFR = 1.1 x VFmax

Figure 1: Conduction losses versus average

forward current

Figure 2: Forward voltage drop versus forward

current

02468

(W)

F(AV)

(A)

F(AV)

δ=tp/T

δ = 0.05

δ = 0.1 δ = 0.2

δ = 1

δ = 0.5

100

0.0

0.5

1.0

1.5

2.0

2.5

3.0

(A)

(V)

T =150°C

(typical values)

T =25°C

(maximum values)

T =150°C

(maximum values)

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