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Os motores de busca de Datasheet de Componentes eletrônicos |
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Os motores de busca de Datasheet de Componentes eletrônicos |
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ISCN129N Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCN129N Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor ISCN129N DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) · Good Linearity of hFE · High Current Capability · Wide Area of Safe Operation · Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS · Recommend for 60W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 12 A ICP Collector Current-Pulse 15 A PC Collector Power Dissipation @ TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -40~150 ℃ |
Nº de peça semelhante - ISCN129N |
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Descrição semelhante - ISCN129N |
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