2007. 12. 03

1/4

SEMICONDUCTOR

TECHNICAL DATA

DTC504

EPITAXIAL PLANAR NPN TRANSISTOR

Revision No : 0

• Features

1) Built-in bias resistors enable the configuration of an inverter circuit without

connecting external input resistors (see equivalent circuit).

2) The bias resistors consist of thinfilm resistors with complete isolation to allow

positive biasing of the input. They also have the advantage of almost completely

eliminating parasitic effects.

3) Only the on/ off conditions need to be set for operation, making device design

easy.

• Structure

NPN digital transistor (with built-in resistors)

• Equivalent circuit

• Elecrical characteristics(Ta= 25°C)

Parameter

symbol

Min.

Max.

Unit

Conditions

Input voltage

V

V

mA

Output Voltage

t

n

e

r

r

u

c

t

u

p

n

I

I

V = 5V

t

n

e

r

r

u

c

t

u

p

t

u

O

µA

-

DC current gain

Input resistance

KΩ

-

MHz

-

Resistance ratio

Transition frequency

*Transition frequency of the device

• Absolute maximum ratings(Ta= 25 °C)

Parameter

Supply voltage

V

50

Input voltage

–10~+40

Output current

30

mA

100

Power dissipation

150

Junction temperature

C

°

150

Storage temperature

–55~+150

Digital transistors (built-in resistors)

OUT

GND

R1

R2

IN

1

3

2

SC-89

Device

Marking

Shipping

DTC504

3000/Tape&Reel

• Device Marking

8C

• We declare that the material of productcompliance with

RoHS requirements.

1

2

3

symbol

limit

unit

V

j

T

stg

T

d

P

cc

V

IN

V

200

300

m

W

C

°

Typ.

O(on)

V

I

G

1

R

R

T

f

-

3

-

-

-

68

32.9

0.8

-

-

-

-

-

-

-

47

1

250

0.5

-

0.3

0.18

0.5

-

61.1

1.2

-

V

I

V

-

V