STTH16L06C datasheet(2/8 Pages) STMICROELECTRONICS

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STTH16L06C

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Table 4: Thermal Resistance

Table 5: Static Electrical Characteristics

Pulse test:

* tp = 5 ms,

δ < 2%

** tp = 380 µs,

δ < 2%

To evaluate the conduction losses use the following equation: P = 1.06 x IF(AV) + 0.036 IF

(RMS)

Table 6: Dynamic Characteristics (per diode)

Symbol

Parameter

Value (max).

Unit

Rth(j-c)

Junction to case

TO-220AB / D2PAK

Per diode

2.5

°C/W

TO-220FPAB

Per diode

TO-220AB / D2PAK

Total

1.6

TO-220FPAB

Total

3.8

Rth(c)

Coupling

TO-220AB / D2PAK

0.7

°C/W

TO-220FPAB

2.5

When the diodes 1 and 2 are used simultaneously:

∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

IR *

Reverse leakage current Tj = 25°C

VR = VRRM

8µA

Tj = 150°C

240

VF **

Forward voltage drop

Tj = 25°C

IF = 8A

1.8

Tj = 150°C

1.05

1.35

Tj = 25°C

IF = 16A

2.08

Tj = 150°C

1.28

1.64

Symbol

Parameter

Test conditions

Min.

Typ Max.

Unit

trr

Reverse recovery

time

Tj = 25°C

IF = 0.5A Irr = 0.25A IR =1A

IF = 1A dIF/dt = 50 A/µs VR =30V

IRM

Reverse recovery

current

Tj = 125°C IF = 8A

VR = 400V

dIF/dt = 100 A/µs

4.5

6.5

tfr

Forward recovery

time

Tj = 25°C

IF = 8A

dIF/dt = 100 A/µs

VFR = 1.1 x VFmax

200

VFP

Forward recovery

voltage

Tj = 25°C

IF = 8A

dIF/dt = 100 A/µs

VFR = 1.1 x VFmax

3.5

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