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SSM3K72KFS Folha de dados(PDF) 3 Page - Toshiba Semiconductor

Nome de Peças SSM3K72KFS
Descrição Electrónicos  MOSFETs Silicon N-Channel MOS
PDF  9 Pages
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Fabricante Electrônico  TOSHIBA [Toshiba Semiconductor]
Página de início  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

SSM3K72KFS Folha de dados(HTML) 3 Page - Toshiba Semiconductor

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SSM3K72KFS
3
5.
5.
5.
5. Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
5.1.
5.1.
5.1.
5.1. Static Characteristics (Unless otherwise specified, T
Static Characteristics (Unless otherwise specified, T
Static Characteristics (Unless otherwise specified, T
Static Characteristics (Unless otherwise specified, Taaaa = 25
= 25
= 25
= 25 
))))
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Forward transfer admittance
(Note 1)
(Note 1)
Symbol
IGSS
IDSS
V(BR)DSS
Vth
RDS(ON)
|Yfs|
Test Condition
VDS = 0 V, VGS = ±16 V
VDS = 60 V, VGS = 0 V
ID = 250 µA, VGS = 0 V
VDS = VGS, ID = 250 µA
ID = 100 mA, VGS = 4.5 V
ID = 100 mA, VGS = 5.0 V
ID = 100 mA, VGS = 10 V
VDS = 10 V, ID = 200 mA
Min
60
1.1
Typ.
1.2
1.15
1.05
1
Max
±10
1
2.1
1.75
1.65
1.5
Unit
µA
V
Ω
S
Note 1: Pulse measurement.
5.2.
5.2.
5.2.
5.2. Dynamic Characteristics (Unless otherwise specified, T
Dynamic Characteristics (Unless otherwise specified, T
Dynamic Characteristics (Unless otherwise specified, T
Dynamic Characteristics (Unless otherwise specified, Taaaa = 25
= 25
= 25
= 25 
))))
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (rise time)
Switching time (turn-on delay time)
Switching time (fall time)
Switching time (turn-off delay time)
Symbol
Ciss
Crss
Coss
tr
td(on)
tf
td(off)
Test Condition
VDS = 10 V, VGS = 0 V,
f = 1 MHz
VDD = 30 V, ID = 200 mA,
VGS = 0 to 10 V, RG = 50 Ω
Duty ≤ 1%, VIN: tr, tf < 5 ns,
Common source,
See Chapter 5.3.
Min
Typ.
26
1.3
5.5
3.6
5.5
17
38
Max
40
11
90
Unit
pF
ns
5.3.
5.3.
5.3.
5.3. Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Fig.
Fig.
Fig.
Fig. 5.3.1
5.3.1
5.3.1
5.3.1 Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Fig.
Fig.
Fig.
Fig. 5.3.2
5.3.2
5.3.2
5.3.2 Input Waveform/Output Waveform
Input Waveform/Output Waveform
Input Waveform/Output Waveform
Input Waveform/Output Waveform
5.4.
5.4.
5.4.
5.4. Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, Taaaa = 25
= 25
= 25
= 25 
))))
Characteristics
Total gate charge (gate-source plus gate-drain)
Gate-source charge
Gate-drain charge
Symbol
Qg
Qgs
Qgd
Test Condition
VDD = 30 V, ID = 200 mA,
VGS = 4.5 V
Min
Typ.
0.39
0.2
0.11
Max
0.6
Unit
nC
2018-04-18
Rev.2.0
©2016-2018
Toshiba Electronic Devices & Storage Corporation



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