SSM3K37FS datasheet(1/5 Pages) TOSHIBA

Nome de Peças	SSM3K37FS

Descrição Electrónicos	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

PDF	5 Pages

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Fabricante Electrônico	TOSHIBA [Toshiba Semiconductor]

Página de início	http://www.semicon.toshiba.co.jp/eng

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SSM3K37FS

2014-03-01

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM3K37FS

○

High Speed Switching Applications

○

Analog Switch Applications

• 1.5Vdrive

• Low ON-resistance

RDS(ON) = 5.60 Ω (max) (@VGS = 1.5 V)

RDS(ON) = 4.05 Ω (max) (@VGS = 1.8 V)

RDS(ON) = 3.02 Ω (max) (@VGS = 2.5 V)

RDS(ON) = 2.20 Ω (max) (@VGS = 4.5 V)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Drain-Source voltage

VDSS

20

V

Gate-Source voltage

VGSS

± 10

V

DC

ID

200

Drain current

Pulse

IDP

400

mA

Power dissipation

PD

100

mW

Channel temperature

Tch

150

°C

Storage temperature range

Tstg

−55 to 150

°C

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Marking

Equivalent Circuit (Top View)

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-2H1B

Weight: 2.4mg(typ.)

SU

1

2

3

1

2

3

SSM

1.

Gate

2.

Source

3.

Drain

Start of commercial production

2011-01

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