SSM3K35FS datasheet(2/5 Pages) TOSHIBA

Nome de Peças	SSM3K35FS

Descrição Electrónicos	TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

PDF	5 Pages

Scroll/Zoom	100%

Fabricante Electrônico	TOSHIBA [Toshiba Semiconductor]

Página de início	http://www.semicon.toshiba.co.jp/eng

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2 / 5 page

SSM3K35FS

2014-03-01

Switching Time Test Circuit

(a) Test Circuit

(b) VIN

Marking

Equivalent Circuit (top view)

Usage Considerations

Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (1 mA for the

SSM3K35FS). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than

Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).

Take this into consideration when using the device.

Handling Precaution

When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is

protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects

that come into direct contact with devices should be made of anti-static materials.

VDD = 3 V

Duty

≤ 1%

VIN: tr, tf < 5 ns

(Zout = 50 Ω)

Common Source

Ta = 25°C

VDD

OUT

2.5 V

μs

ton

90%

10%

0 V

2.5 V

10%

90%

toff

VDD

VDS (ON)

SSM3K35FS Folha de dados(PDF) 2 Page - Toshiba Semiconductor