FMMT549.. datasheet(3/7 Pages) ONSEMI

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FMMT549 Rev. 1.1.0

Thermal Characteristics

Values are at TA = 25°C unless otherwise noted.

Note:

3. Device is mounted on FR-4 PCB 4.5 inch X 5 inch, mounting pad 0.02 in2 of 2 oz copper.

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Note:

4. Pulse test: pulse width

≤ 300 µs, duty cycle ≤ 2.0%

Symbol

Parameter

Max.

Unit

Total Device Dissipation, by RθJA

500

Derate Above 25

°C

4mW/

°C

RθJA

Thermal Resistance, Junction-to-Ambient

250

°C/W

Symbol

Parameter

Conditions

Min.

Max.

Unit

BVCEO

Collector-Emitter Breakdown Voltage IC = -10 mA, IB = 0

-30

BVCBO

Collector-Base Breakdown Voltage

IC = -100 µA, IE = 0

-35

BVEBO

Emitter-Base Breakdown Voltage

IE = -100 µA, IC = 0

-5.0

ICBO

Collector Cut-Off Current

VCB = -30 V, IE = 0

-100

VCB = -30 V, IE = 0,

TA = 100°C

-10

µA

IEBO

Emitter Cut-Off Current

VEB = -4.0 V, IC = 0

-100

hFE

DC Current Gain(4)

VCE = -2.0 V, IC = -50 mA

VCE = -2.0 V, IC = -500 mA

100

300

VCE = -2.0 V, IC = -1 A

VCE = -2.0 V, IC = -2 A

VCE(sat)

Collector-Emitter Saturation

Voltage(4)

IC = -1 A, IB = -100 mA

-500

IC = -2 A, IB = -200 mA

-750

VBE(sat)

Base-Emitter Saturation Voltage(4)

IC = -1 A, IB = -100 mA

-1.25

VBE(on)

Base-Emitter On Voltage(4)

IC = -1 A, VCE = -2.0 V

-1.0

Current Gain Bandwidth Product

IC = -100 mA, VCE = -5 V,

f = 100 MHz

100

MHz

Cobo

Output Capacitance

VCB = -10 V, IE = 0,

f = 1 MHz

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