IXTH3N100P datasheet(4/7 Pages) IXYS

Nome de Peças	IXTH3N100P

Descrição Electrónicos	N-Channel Enhancement Mode Power MOSFET

PDF	7 Pages

Scroll/Zoom	100%

Fabricante Electrônico	IXYS [IXYS Corporation]

Página de início	http://www.ixys.com

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4 / 7 page

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTA3N100P

IXTP3N100P

IXTH3N100P

Fig. 7. Input Admittance

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

3.03.5

4.04.5

5.05.5

6.06.5

VGS - Volts

TJ = 125

- 40

Fig. 8. Transconductance

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

ID - Amperes

TJ = - 40

125

Fig. 9. Forward Voltage Drop of Intrinsic Diode

0.4

0.45

0.5

0.55

0.6

0.65

0.7

0.75

0.8

0.85

0.9

VSD - Volts

TJ = 125

TJ = 25

Fig. 10. Gate Charge

QG - NanoCoulombs

VDS = 500V

I D = 1.5A

I G = 1mA

Fig. 11. Capacitance

100

1,000

10,000

VDS - Volts

f = 1 MHz

Ciss

Crss

Coss

Fig. 12. Forward-Bias Safe Operating Area

0.1

100

1,000

VDS - Volts

TJ = 150

TC = 25

Single Pulse

100μs

1ms

RDS(on) Limit

10ms

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