IXFN60N80P

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

35

67

S

C

iss

18

nF

C

oss

V

1200

pF

C

rss

44

pF

t

d(on)

36

ns

t

r

29

ns

t

d(off)

110

ns

t

f

26

ns

Q

g(on)

250

nC

Q

gs

V

90

nC

Q

gd

78

nC

R

thJC

0.12

C/W

R

thCS

0.05

C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

60

A

I

SM

Repetitive, Pulse Width Limited by T

JM

150

A

V

SD

I

1.5

V

t

rr

250 ns

Q

RM

0.6

C

I

RM

6.0

A

Note

1. Pulse test, t

 300s, duty cycle, d  2%.

Resistive Switching Times

V

R

I

V