SSM3J56ACT datasheet(1/9 Pages) TOSHIBA

Nome de Peças	SSM3J56ACT

Descrição Electrónicos	MOSFETs Silicon P-Channel MOS

PDF	9 Pages

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Fabricante Electrônico	TOSHIBA [Toshiba Semiconductor]

Página de início	http://www.semicon.toshiba.co.jp/eng

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SSM3J56ACT

1

MOSFETs Silicon P-Channel MOS

SSM3J56ACT

Start of commercial production

2015-11

1.

1. Applications

Applications

•

High-Speed Switching

2.

2. Features

Features

(1)

1.2 V drive

(2)

Low drain-source on-resistance

: RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V)

RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V)

RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V)

RDS(ON) = 900 mΩ (max) (@VGS = -1.5 V)

RDS(ON) = 4000 mΩ (max) (@VGS = -1.2 V)

3.

3. Packaging and Pin Assignment

Packaging and Pin Assignment

CST3

1: Gate

2: Source

3: Drain

2016-09-13

Rev.2.0

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