9.5A，600V

N-CHANNEL MOSFET

6. Electrical characteristics

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Off characteristics

Drain-source breakdown voltage

600

-

-

V

Zero gate voltage drain current

-

-

1

μA

ºC

-

-

10

μA

Gate-body leakage current

Forward

-

-

100

nA

Reverse

-

-

-100

nA

-

0.7

-

V/

°C

On characteristics

Gate threshold voltage

μA

2.0

-

4.0

V

Static drain-source on-resistance

-

0.6

0.73

Ω

Dynamic characteristics

Input capacitance

f=1MHz

-

1570

2040

pF

Output capacitance

-

166

215

pF

Reverse transfer capacitance

-

18

24

pF

Switching characteristics

Turn-on delay time

-

23

55

ns

Rise time

-

69

150

ns

Turn-off delay time

-

144

300

ns

Fall time

-

77

165

ns

Total gate charge

-

44

57

nC

Gate-source charge

-

6.7

-

nC

Gate-drain charge

-

18.5

-

nC

Drain-source diode characteristics

Drain-source diode forward voltage

-

-

1.4

V

Continuous drain-source current

-

-

9.5

A

Pulsed drain-source current

-

-

38.0

A

Reverse recovery time

(note4)

-

420

-

ns

Reverse recovery charge

-

4.2

-

μC

Note:1.repetitive rating:pulse width limited by maximum junctio/n temperature

4.Pulse test:pulse width<300

μs,duty cycle<2%

5.Essentially independent of operating temperature

3 of5

Rev 1.1 JAN 2014

KIA

SEMICONDUCTORS

10N60H

KIA

SEMICONDUCTORS

KIA

SEMICONDUCTORS