IXYS reserves the right to change limits, test conditions, and dimensions.

IXTQ 110N10P

IXTT 110N10P

IXYS MOSFETs and IGBTs are covered by

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,381,025

6,162,665

6,306,728 B1 6,534,343

6,683,344

one or moreof the following U.S. patents:

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,486,715

6,259,123B1 6,404,065B1 6,583,505

6,710,405B2

Fig. 11. Capacitance

100

1000

10000

0

5

10

15

20

25

30

35

40

Ciss

Coss

Crss

f = 1MHz

Fig. 10. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0

2040

6080

100

120

V

I

I

Fig. 7. Input Adm ittance

0

25

50

75

100

125

150

175

200

225

250

4

5

678

9

10

11

T

25

150

Fig. 8. Transconductance

0

10

20

30

40

50

60

70

0

50

100

150

200

250

300

T

25

150

Fig. 9. Source Current vs.

Source-To-Drain Voltage

0

50

100

150

200

250

300

350

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

T

T

Fig. 12. Forw ard-Bias

Safe Operating Area

10

100

1000

1

10

100

1000

100µs

1ms

DC

T

T

R

10ms

25µs