EMB50P03JS datasheet(1/5 Pages) EXCELLIANCE

Nome de Peças	EMB50P03JS

Descrição Electrónicos	P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

PDF	5 Pages

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Fabricante Electrônico	EXCELLIANCE [Excelliance MOS Corp.]

Página de início	http://www.excelliancemos.com/

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2015/10/29

p.1

EMB50P03JS

G

S

D

P‐Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

BVDSS ‐30V

RDSON (MAX.)

50mΩ

ID ‐4.5A

Pb‐Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNIT

Gate‐Source Voltage

VGS

±20

V

Continuous Drain Current

TA = 25 °C

ID

‐4.5

A

TA = 70 °C ‐3.5

Pulsed Drain Current

1

IDM ‐18

Power Dissipation

TA = 25 °C

PD

1.04

W

TA = 70 °C

0.66

Operating Junction & Storage Temperature Range

Tj, Tstg ‐55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNIT

Junction‐to‐Ambient

3

RJA (T ≤ 10sec)

83

°C / W

RJA (Steady State)

120

1Pulse width limited by maximum junction temperature.

2Duty cycle  1％

3The device mounted on a 1 in2 pad of 2 oz copper.

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EMB50P03JS Folha de dados(PDF) 1 Page - Excelliance MOS Corp.

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