KBE00S003M datasheet(9/86 Pages) SAMSUNG

9 / 86 page

MCP MEMORY

KBE00S003M-D411

Revision 1.0

May 2005

512Bytes

16 Bytes

Figure 1. FUNCTIONAL BLOCK DIAGRAM

Figure 2. ARRAY ORGANIZATION

VCC

X-Buffers

2G + 64M Bits

Command

NAND Flash

ARRAY

(512 + 16)Bytes x 524,288

Y-Gating

Page Register & S/A

I/O Buffers & Latches

Y-Buffers

Control Logic

Global Buffers

Output

Driver

VSS

A9 - A27

A0 - A7

Command

I/0 0

I/0 7

VCC/VCCQ

VSS

1st half Page Register

(=256 Bytes)

2nd half Page Register

(=256 Bytes)

256K Pages

(=8,192 Blocks)

512 Bytes

8 bits

16 Bytes

1 Block = 32 Pages

= (16K + 512) Bytes

I/O 0 ~ I/O 7

1 Page = 528 Bytes

1 Block = 528 Bytes x 32 Pages

= (16K + 512) Bytes

1 Device = 528Bytes x 32Pages x 16,384 Blocks

= 2,112 Mbits

Column Address

Row Address

(Page Address)

Page Register

CLE ALE

NOTE : Column Address : Starting Address of the Register.

00h Command(Read) : Defines the starting address of the 1st half of the register.

01h Command(Read) : Defines the starting address of the 2nd half of the register.

* A8 is set to "Low" or "High" by the 00h or 01h Command.

* L must be set to "Low".

* The device ignores any additional input of address cycles than reguired.

I/O 0

I/O 1

I/O 2

I/O 3

I/O 4

I/O 5

I/O 6

I/O 7

1st Cycle

2nd Cycle

A10

A11

A12

A13

A14

A15

A16

3rd Cycle

A17

A18

A19

A20

A21

A22

A23

A24

4th Cycle

A25

A26

A27

& High Voltage

Generator

Latches

& Decoders

Latches

& Decoders

KBE00S003M Folha de dados(PDF) 9 Page - Samsung semiconductor

KBE00S003M Folha de dados(HTML) 9 Page - Samsung semiconductor

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86

Folha de dados Download

Ligação URL