SM2222CSQG datasheet(4/14 Pages) SINOPWER

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SM2222CSQG

Rev. A.2 - January, 2019

P Channel Electrical Characteristics (T

A = 25°C unless otherwise noted)

Symbol

Parameter

Test Conditions

P Channel

Unit

Min.

Typ.

Max.

Static Characteristics

BVDSS

Drain-Source Breakdown Voltage VGS=0V, IDS=-250μA

-20

IDSS

Zero Gate Voltage Drain Current

VDS=-16V, VGS=0V

-1

TJ=85°C

-30

VGS(th)

Gate Threshold Voltage

VDS=VGS , IDS=-250mA

-0.5

-0.7

-1

IGSS

Gate Leakage Current

VGS=±10V, VDS=0V

±10

RDS(ON)

Drain-Source On-state Resistance

VGS=-4.5V, IDS=-2.5A

VGS=-2.5V, IDS=-2A

120

VGS=-1.8V, IDS=-1A

130

210

Diode Characteristics

VSD

Diode Forward Voltage

ISD=-1A, VGS=0V

-0.8

-1.2

trr

Reverse Recovery Time

ISD=-2.5A, dlSD/dt=100A/ms

Qrr

Reverse Recovery Charge

Dynamic Characteristics

Gate Resistance

VGS=0V,VDS=0V,F=1MHz

10.8

Ciss

Input Capacitance

VGS=0V,

VDS=-10V,

Frequency=1.0MHz

365

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

td(ON)

Turn-on Delay Time

VDD=-10V, RL=10W,

IDS=-1A, VGEN=-4.5V,

RG=6W

Turn-on Rise Time

14.4

td(OFF)

Turn-off Delay Time

Turn-off Fall Time

Gate Charge Characteristics

Total Gate Charge

VDS=-10V, VGS=-4.5V,

IDS=-2.5A

4.6

Qgs

Gate-Source Charge

0.5

Qgd

Gate-Drain Charge

1.9

Note d：Pulse test; pulse width

£300

ms, duty cycle£2%.

Note e：Guaranteed by design, not subject to production testing.

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